Brian Swartzentruber

Education

• Ph.D., Physics
• University of Wisconsin-Madison
• 1992

• B.A., Physics/Mathematics
• Goshen College
• 1983

Positions

• 1992 - Present | Principal Member of Technical Staff, Center for Integrated Nanotechnologies (CINT), Sandia National Laboratories, Albuquerque

Awards

• Fellow of the American Physical Society, 2002
• Fellow of the American Vacuum Society, 1997
• Peter Mark Award, American Vacuum Society, 1997
• Office of Energy Research’s Young Independent Scientist Award, Department of Energy, 1996
• Outstanding Scientific Accomplishment in Solid State Physics, DOE – Basic Energy Sciences, 1996
• Wayne B. Nottingham Prize, Physical Electronics Conference, 1991
• Student Award, American Vacuum Society – Electronic Materials & Processing Division, 1990
• Dean's Fellowship, UW-Madison, 1990
• Russell & Sigurd Varian Fellow, American Vacuum Society, 1989
• Department of Education Fellowship, UW-Madison, 1988
• Wisconsin Alumni Research Foundation Fellowship, UW-Madison, 1986

Professional Societies

• Affiliated Faculty, Dept. of Chemical Engineering, New Mexico State University 2013
• Member/Fellow of American Physical Society
• Member/Fellow of American Vacuum Society
• Editorial Board of Journal of Scanning Probe Microscopy, 2005-2010
• Local Organizing Committee of the 3rd LEEM/PEEM Workshop, 2002
• Executive Committee of the Electronic Materials and Processing Division, AVS, 1999-2002
• Local Organizing Committee of the 61st Physical Electronics Conference, 2001
• Program Committee of the Nanoscale Science and Technology Division, AVS, 1999
• Executive Committee of the Nanoscale Science and Technology Division, AVS, 1997-1998

Publications

• “Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 54(25), 2678 (1985).
• “Electron Interferometry at Crystal Surfaces”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 55(9), 987 (1985).
• “Tunneling Images of Atomic Steps on the Si(111) 7x7 Surface”, R. S. Becker, J. A. Golovchenko, E. G. McRae, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2028 (1985).
• “Real-Space Observation of Surface States on Si(111) 7x7 with the Tunneling Microscope”, R. S. Becker, J. A. Golovchenko, D. R. Hamann, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2032 (1985).
• “Tunneling Images of the 5x5 Surface Reconstruction on GeSi(111)” R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber, Phys. Rev. B, 32(12), 8455 (1985).
• “New Reconstructions on Silicon (111) Surfaces”, R. S. Becker, J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber, Phys. Rev. Lett. 57(8), 1020 (1986).
• “Atomic-scale Surface Modifications Using a Tunneling Microscope”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Nature, 325(6103), 419 (1987).
• “Geometric and Local Electronic Structure of Si(111)-As”, R. S. Becker, B. S. Swartzentruber, J. S. Vickers, M. S. Hybertsen, and S. G. Louie, Phys. Rev. Lett. 60(2), 116 (1988).
• “Tunneling Microscopy of Silicon and Germanium: Si(111) 7x7, SnGe(111) 7x7, GeSi(111) 5x5, Si(111) 9x9, Ge(111) 2x8, Ge(100) 2x1, Si(110) 5x1”, R. S. Becker, B. S. Swartzentruber, and J. S. Vickers, J. Vac. Sci. Tech. A, 6(2), 116 (1988).
• “Dimer-adatom-stacking-fault (DAS) and non-DAS (111) Semiconductor Surfaces: A Comparison of Ge(111)-c(2x8) to Si(111)-(2x2),-(5x5),-(7x7), and -(9x9) with Scanning Tunneling Microscopy”, R. S. Becker, B. S. Swartzentruber, J. S. Vickers, and T. Klitsner, Phys. Rev. B, 30(3), 1633 (1989).
• “Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Silicon Surfaces”, B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 7(4), 2901 (1989).
• “Ordering Kinetics at Surfaces”, M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y.-W. Mo, Ultramicroscopy, 31, 87 (1989).
• “Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)”, Y.-W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Lett. 63(21), 2393 (1989).
• “Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)”, Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 201 (1990).
• “Observations of Strain Effects on the Si(001) Surface Using STM”, B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 210 (1990).