1992 - Present | Principal Member of Technical Staff, Center for Integrated Nanotechnologies (CINT), Sandia National Laboratories, Albuquerque
Awards
Fellow of the American Physical Society, 2002
Fellow of the American Vacuum Society, 1997
Peter Mark Award, American Vacuum Society, 1997
Office of Energy Research’s Young Independent Scientist Award, Department of Energy, 1996
Outstanding Scientific Accomplishment in Solid State Physics, DOE – Basic Energy Sciences, 1996
Wayne B. Nottingham Prize, Physical Electronics Conference, 1991
Student Award, American Vacuum Society – Electronic Materials & Processing Division, 1990
Dean's Fellowship, UW-Madison, 1990
Russell & Sigurd Varian Fellow, American Vacuum Society, 1989
Department of Education Fellowship, UW-Madison, 1988
Wisconsin Alumni Research Foundation Fellowship, UW-Madison, 1986
Professional Societies
Affiliated Faculty, Dept. of Chemical Engineering, New Mexico State University 2013
Member/Fellow of American Physical Society
Member/Fellow of American Vacuum Society
Editorial Board of Journal of Scanning Probe Microscopy, 2005-2010
Local Organizing Committee of the 3rd LEEM/PEEM Workshop, 2002
Executive Committee of the Electronic Materials and Processing Division, AVS, 1999-2002
Local Organizing Committee of the 61st Physical Electronics Conference, 2001
Program Committee of the Nanoscale Science and Technology Division, AVS, 1999
Executive Committee of the Nanoscale Science and Technology Division, AVS, 1997-1998
Publications
“Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 54(25), 2678 (1985).
“Electron Interferometry at Crystal Surfaces”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 55(9), 987 (1985).
“Tunneling Images of Atomic Steps on the Si(111) 7x7 Surface”, R. S. Becker, J. A. Golovchenko, E. G. McRae, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2028 (1985).
“Real-Space Observation of Surface States on Si(111) 7x7 with the Tunneling Microscope”, R. S. Becker, J. A. Golovchenko, D. R. Hamann, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2032 (1985).
“Tunneling Images of the 5x5 Surface Reconstruction on GeSi(111)” R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber, Phys. Rev. B, 32(12), 8455 (1985).
“New Reconstructions on Silicon (111) Surfaces”, R. S. Becker, J. A. Golovchenko, G. S. Higashi, and B. S. Swartzentruber, Phys. Rev. Lett. 57(8), 1020 (1986).
“Atomic-scale Surface Modifications Using a Tunneling Microscope”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Nature, 325(6103), 419 (1987).
“Geometric and Local Electronic Structure of Si(111)-As”, R. S. Becker, B. S. Swartzentruber, J. S. Vickers, M. S. Hybertsen, and S. G. Louie, Phys. Rev. Lett. 60(2), 116 (1988).
“Tunneling Microscopy of Silicon and Germanium: Si(111) 7x7, SnGe(111) 7x7, GeSi(111) 5x5, Si(111) 9x9, Ge(111) 2x8, Ge(100) 2x1, Si(110) 5x1”, R. S. Becker, B. S. Swartzentruber, and J. S. Vickers, J. Vac. Sci. Tech. A, 6(2), 116 (1988).
“Dimer-adatom-stacking-fault (DAS) and non-DAS (111) Semiconductor Surfaces: A Comparison of Ge(111)-c(2x8) to Si(111)-(2x2),-(5x5),-(7x7), and -(9x9) with Scanning Tunneling Microscopy”, R. S. Becker, B. S. Swartzentruber, J. S. Vickers, and T. Klitsner, Phys. Rev. B, 30(3), 1633 (1989).
“Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Silicon Surfaces”, B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 7(4), 2901 (1989).
“Ordering Kinetics at Surfaces”, M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y.-W. Mo, Ultramicroscopy, 31, 87 (1989).
“Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)”, Y.-W. Mo, B. S. Swartzentruber, R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Lett. 63(21), 2393 (1989).
“Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)”, Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 201 (1990).
“Observations of Strain Effects on the Si(001) Surface Using STM”, B. S. Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 210 (1990).
Center for Integrated Nanotechnologies
