Composition And Method For Removing Photoresist Materials From Electronic Components

The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier.

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Composition And Method For Removing Photoresist Materials From Electronic Components

The invention is a combination of at least one dense phase fluid and at least one dense phase fluid modifier which can be used to contact substrates for electronic parts such as semiconductor wafers or chips to remove photoresist materials which are applied to the substrates during manufacture of the electronic parts. The dense phase fluid modifier is one selected from the group of cyclic, aliphatic or alicyclic compounds having the functional group: ##STR1## wherein Y is a carbon, oxygen, nitrogen, phosphorus or sulfur atom or a hydrocarbon group having from 1 to 10 carbon atoms, a halogen or halogenated hydrocarbon group having from 1 to 10 carbon atoms, silicon or a fluorinated silicon group; and wherein R.sub.1 and R.sub.2 can be the same or different substituents; and wherein, as in the case where X is nitrogen, R.sub.1 or R.sub.2 may not be present. The invention compositions generally are applied to the substrates in a pulsed fashion in order to remove the hard baked photoresist material remaining on the surface of the substrate after removal of soft baked photoresist material and etching of the barrier layer.

U.S. Patent No.: 6,403,544 (DOE S-94,672)

Patent Application Filing Date: July 21, 2000

Patent Issue Date: June 11, 2002

Licensing Status:

Available for Express Licensing(?). View terms and a sample license agreement.

For more information, contact Licensing@lanl.gov.

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