Wide Band Gap Semiconductor Templates

The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array.

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Wide Band Gap Semiconductor Templates

The present invention relates to a thin film structure based on an epitaxial (111)-oriented rare earth-Group IVB oxide on the cubic (001) MgO terminated surface and the ion-beam-assisted deposition ("IBAD") techniques that are amendable to be over coated by semiconductors with hexagonal crystal structures. The IBAD magnesium oxide ("MgO") technology, in conjunction with certain template materials, is used to fabricate the desired thin film array. Similarly, IBAD MgO with appropriate template layers can be used for semiconductors with cubic type crystal structures.

U.S. Patent No.: 7,851,412 (DOE S-109,053)

Patent Application Filing Date: February 15, 2007

Patent Issue Date: December 14, 2010

Licensing Status:

Available for Express Licensing(?). View terms and a sample license agreement.

For more information, contact Licensing@lanl.gov.


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