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MST  Structure/Property Relations, MST-8

Scanning Probe Microscopy Team

Ferroelectric Oxide Thin Films

Ferroelectric materials are able to maintain an electric polarization in the absence of externally applied electric fields. The trapped charge associated with this polarization produces a measurable electric field that can be used in non-volatile memory devices and other unique electronic applications. As with many other materials in the electronic device industry, ferroelectrics are often employed in thin film form and the issues of interest become optimization of growth and the resulting properties.

Click on the links below to see how we have applied scanning probe microscopy to the study of these materials.

Bi4Ti3O12

SrBi2Nb2O9 and SrBi2Ta2O9

spm team
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