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Introduction to the NHMFL Pulsed Field Facility at LANL

Information on the physical set-up of pulsed field measurements

Read about lock-in amplifiers and their role in your measurements

Information about noise and ways to eliminate it from your measurements

How to collect and evaluate your measurement data

Information on optical spectroscopy

Information about time-resolved optics

Information on de Haas van Alphen Effect measurements

Information on Shubinkov de Haas Effect measurements

Information on Absolute Resistivity measurements

Information on Heat Capacity measurements

Information on RF Penetration Depth measurements

Publications about de Haas-van Alphen Effect

RECENT NHMFL PUBLICATIONS CONCERNING THE DE HAAS-VAN ALPHEN EFFECT:

Alver, U.; Goodrich, R.G.; Harrison, N.; Hall, D.W.; Palm, E.C.; Murphy, T.P.; Tozer, S.W.; Pagliuso, P.G.; Moreno, N.O.; Sarrao, J.L.; and Fisk, Z. "Localized f electrons in CexLa1-xRhIn5: de Haas-can Alphen measurements." PHYSICAL REVIEW B, 64 (2001): 1404XX(R).

Pricopi, L.; Haanappel, E.G.; Askenazy, S.; Harrison, N.; Bennett, M.; Lejay, P.; Demuer, A.; Lapertot, G. "de Haas-van Alphen studies of the heavy fermions CeAl2 and CeRu2Si2." PHYSICA B, 294 (2001): 276-279.

Teklu, A.A.; Goodrich, R.G.; Harrison, N.; Hall, D.; Fisk, Z.; Young, D. "Fermi surface properties of low-concentration CexLa1-xB6: de Haas-van Alphen." PHYSICAL REVIEW B, 62 (#19) (2000): 12875-12881.