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 The
Czochralski crystal growth method is the method that is used to
produce the majority of commercially available single crystals.
This method yields fairly large crystals with low defect concentrations
and is especially suited to semiconductor (e.g. SI and GaAs) and
oxide (Nd: YAG and Ti: sapphire) crystal growth. The Czochralski
crystal growth in MST-8 is currently focused on growth of scintillator
crystals for the DARHT second axis detector. There are two growth
stations which are based upon Pillar Mark-11 50 kW, 10kHz generators.
The units employ automatic
diameter control (ADC) through the crystal weighing method. The
stainless steel chambers allow atmosphere control with limited overpressure
and vacuum capabilities. In addition to conventional seed rotation
and translation capabilities, the systems also have crucible rotation
and translation, coil translation and translation of an inner crucible
or separator plate.
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