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Brian S. Swartzentruber

Brian Swartzentruber

Email
Phone (505) 844-6393

Capabilities

  • CINT
  • Manipulate/Assemble
  • Structure Measurements
  • Property Measurements

Expertise

Nanoscale Electronics & Mechanics

Education

Ph.D., Physics, University of Wisconsin-Madison, 1992

B.A., Physics/Mathematics, Goshen College, 1983

 

Professional Appointments

Principal Member of Technical Staff, Center for Integrated Nanotechnologies (CINT), , Sandia National Laboratories, Albuquerque, NM 3/1992 - present

 

Professional Societies

Affiliated Faculty, Dept. of Chemical Engineering, New Mexico State University 2013

Member/Fellow of American Physical Society

Member/Fellow of American Vacuum Society

Editorial Board of Journal of Scanning Probe Microscopy, 2005-2010

Local Organizing Committee of the 3rd LEEM/PEEM Workshop, 2002

Executive Committee of the Electronic Materials and Processing Division, AVS, 1999-2002

Local Organizing Committee of the 61st Physical Electronics Conference, 2001

Program Committee of the Nanoscale Science and Technology Division, AVS, 1999

Executive Committee of the Nanoscale Science and Technology Division, AVS, 1997-1998

 

Awards

Fellow of the American Physical Society, 2002

Fellow of the American Vacuum Society, 1997

Peter Mark Award, American Vacuum Society, 1997

Office of Energy Research’s Young Independent Scientist Award, Department of Energy, 1996

Outstanding Scientific Accomplishment in Solid State Physics, DOE – Basic Energy Sciences, 1996

Wayne B. Nottingham Prize, Physical Electronics Conference, 1991

Student Award, American Vacuum Society – Electronic Materials & Processing Division, 1990

Dean's Fellowship, UW-Madison, 1990

Russell & Sigurd Varian Fellow, American Vacuum Society, 1989

Department of Education Fellowship, UW-Madison, 1988

Wisconsin Alumni Research Foundation Fellowship, UW-Madison, 1986

 

Publications

“Tunneling Images of Germanium Surface Reconstructions and Phase Boundaries”, R. S. Becker, J.
A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 54(25), 2678 (1985).

“Electron Interferometry at Crystal Surfaces”, R. S. Becker, J. A. Golovchenko, and B. S. Swartzentruber, Phys. Rev. Lett. 55(9), 987 (1985).

“Tunneling Images of Atomic Steps on the Si(111) 7x7 Surface”, R. S. Becker, J. A. Golovchenko, E.
G. McRae, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2028 (1985).

“Real-Space Observation of Surface States on Si(111) 7x7 with the Tunneling Microscope”, R. S.
Becker, J. A. Golovchenko, D. R. Hamann, and B. S. Swartzentruber, Phys. Rev. Lett. 55(19), 2032
(1985).

“Tunneling Images of the 5x5 Surface Reconstruction on GeSi(111)” R. S. Becker, J. A. Golovchenko, B. S. Swartzentruber, Phys. Rev. B, 32(12), 8455 (1985).

“New Reconstructions on Silicon (111) Surfaces”, R. S. Becker, J. A. Golovchenko, G. S. Higashi,
and B. S. Swartzentruber, Phys. Rev. Lett. 57(8), 1020 (1986).

“Atomic-scale Surface Modifications Using a Tunneling Microscope”, R. S. Becker, J. A.
Golovchenko, and B. S. Swartzentruber, Nature, 325(6103), 419 (1987).

“Geometric and Local Electronic Structure of Si(111)-As”, R. S. Becker, B. S. Swartzentruber, J. S.
Vickers, M. S. Hybertsen, and S. G. Louie, Phys. Rev. Lett. 60(2), 116 (1988).

“Tunneling Microscopy of Silicon and Germanium: Si(111) 7x7, SnGe(111) 7x7, GeSi(111) 5x5,
Si(111) 9x9, Ge(111) 2x8, Ge(100) 2x1, Si(110) 5x1”, R. S. Becker, B. S. Swartzentruber, and J. S.
Vickers, J. Vac. Sci. Tech. A, 6(2), 116 (1988).

“Dimer-adatom-stacking-fault (DAS) and non-DAS (111) Semiconductor Surfaces: A Comparison of
Ge(111)-c(2x8) to Si(111)-(2x2),-(5x5),-(7x7), and -(9x9) with Scanning Tunneling Microscopy”, R. S.
Becker, B. S. Swartzentruber, J. S. Vickers, and T. Klitsner, Phys. Rev. B, 30(3), 1633 (1989).

“Scanning Tunneling Microscopy Studies of Structural Disorder and Steps on Silicon Surfaces”, B. S.
Swartzentruber, Y.-W. Mo, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 7(4), 2901 (1989).

“Ordering Kinetics at Surfaces”, M. G. Lagally, R. Kariotis, B. S. Swartzentruber, and Y.-W. Mo,
Ultramicroscopy, 31, 87 (1989).

“Growth and Equilibrium Structures in the Epitaxy of Si on Si(001)”, Y.-W. Mo, B. S. Swartzentruber,
R. Kariotis, M. B. Webb, and M. G. Lagally, Phys. Rev. Lett. 63(21), 2393 (1989).

“Scanning Tunneling Microscopy Study of Diffusion, Growth, and Coarsening of Si on Si(001)”, Y.-W.
Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 201
(1990).

“Observations of Strain Effects on the Si(001) Surface Using STM”, B. S. Swartzentruber, Y.-W. Mo,
M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. A, 8(1), 210 (1990).

“Model Diffraction Profiles Parallel to Rough Step Edges”, R. Kariotis, B. S. Swartzentruber, and M.
G. Lagally, J. Appl. Phys., 67(6), 2848 (1990).

“Growth of Si on Flat and Vicinal Si(001) Surfaces: A Scanning Tunneling Microscopy Study”, Y.-W.
Mo, R. Kariotis, B. S. Swartzentruber, M. B. Webb, and M. G. Lagally, J. Vac. Sci. Tech. B, 8(2), 232
(1990).

“The Effect of External Stress on Si Surfaces”, M. B. Webb, F. K. Men, B. S. Swartzentruber, and M.
G. Lagally, J. Vac. Sci. Tech. A, 8(3), 2658 (1990).

“Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)”, Y.-W. Mo, D. E. Savage, B. S.
Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 65(8), 1020 (1990).

“Direct Determination of Step and Kink Energies on Vicinal Si(001)”, B. S. Swartzentruber, Y.-W. Mo,
R. Kariotis, M. G. Lagally, and M. B. Webb, Phys. Rev. Lett., 65(15), 1913 (1990).

“Kinetics of Strain-Induced Domain Formation at Surfaces”, M. B. Webb, F. K. Men, B. S.
Swartzentruber, R. Kariotis, and M. G. Lagally, in Kinetics of Ordering and Growth at Surfaces (ed. M.
G. Lagally), Plenum, New York, NY (1990).

“Microscopic Aspects of the Initial Stages of Epitaxial Growth: A Scanning Tunneling Microscopy
Study of Si on Si(001)”, M. G. Lagally, Y.-W. Mo, R. Kariotis, B. S. Swartzentruber, and M. B. Webb,
in Kinetics of Ordering and Growth at Surfaces (ed. M. G. Lagally), Plenum, New York, NY (1990).

“Domain Boundary Control of Edge Roughness in Vicinal Si(001)”, B. S. Swartzentruber, Y.-W. Mo,
and M. G. Lagally, Appl. Phys. Lett., 58(8), 822 (1991).

“Surface Step Configurations Under Strain: Kinetics and Step-Step Interactions”, M. B. Webb, F. K.
Men, B. S. Swartzentruber, R. Kariotis, and M. G. Lagally, Surf. Sci., 242, 23 (1991).

“The Behavior of Steps on Si(001) as a Function of Vicinality”, B. S. Swartzentruber, N. Kitamura, M.
G. Lagally, and M. B. Webb, Phys. Rev. B, 47, 13432 (1993).

“Variable-Temperature STM Measurements of Step Kinetics on Si(001)”, N. Kitamura, B. S.
Swartzentruber, M. G. Lagally, and M. B. Webb, Phys. Rev. B, 48, 5704 (1993).

“New Method for Empirically Determining Surface Electronic Species from Multiple-Bias STM Images:
A Multivariate Classification Approach”, A. M. Bouchard, G. C. Osbourn, and B. S. Swartzentruber,
Surf. Sci., 321, 276 (1994).

“Kinetics of Atomic-Scale Fluctuations of Steps on Si(001) Measured with Variable-Temperature
STM”, B. S. Swartzentruber and M. Schacht, Surf. Sci., 322, 83 (1995).
29) “STM Measurements of Step-Flow Kinetics During Atom Removal by Low-Energy Ion Bombardment
of Si(001)”, B. S. Swartzentruber, C. M. Matzke, D. L. Kendall, and J. E. Houston, Surf. Sci., 329, 83
(1995).

“Initial Stages of Fe Chemical Vapor Deposition onto Si(001)”, D. P. Adams, L. L. Tedder, T. M.
Mayer, B. S. Swartzentruber, and E. Chason, Phys. Rev. Lett., 74, 5088 (1995).

“Direct Measurement of Surface Diffusion Using Atom-Tracking Scanning Tunneling Microscopy”, B.
S. Swartzentruber, Phys. Rev. Lett., 76, 459 (1996).

“Nanometer-Scale Lithography on Si(001) using Adsorbed H as an Atomic-Layer Resist”, D. P.
Adams, T. M. Mayer, and B. S. Swartzentruber, J. Vac. Sci. Tech. B 14(3), 1642 (1996).

“Selective Area Growth of Metal Nanostructures”, D. P. Adams, T. M. Mayer, and B. S.
Swartzentruber, Appl. Phys. Lett. 68, 2210 (1996).

“Experimental and Theoretical Study of the Rotation Rate of Si Ad-dimers on the Si(001) Surface”, B.
S. Swartzentruber, A. P. Smith, and H. Jónsson, Phys. Rev. Lett. 77, 2518 (1996).

“Island Structure Evolution During Chemical Vapor Deposition”, D. P. Adams, T. M. Mayer, E.
Chason, B. K. Kellerman, and B. S. Swartzentruber, Surf. Sci. 371, 445 (1997).

“Kinetics of Si Monomer Trapping at Steps and Islands on Si(001)”, B. S. Swartzentruber, Phys. Rev.
B 55, 1322 (1997).

“Si Ad-Dimer Interactions with Steps and Islands on Si(001)”, B. S. Swartzentruber, Surf. Sci. 374,
277 (1997).

“Atomic-Scale Dynamics of Atoms and Dimers on the Si(001) Surface”, B. S. Swartzentruber, Surf.
Sci. 386, 195 (1997).

“Step Faceting at the (001) Surface of B-doped Si”, J. B. Hannon, N. C. Bartelt, B. S. Swartzentruber,
J. C. Hamilton, and G. L. Kellogg, Phys. Rev. Lett. 79, 4226 (1997).

“Spontaneous Formation of an Ordered c(4x2)/(2x1) Domain Pattern on Ge(001)”, H. J. W. Zandvliet,
B. S. Swartzentruber, W. Wulfhekel, B. J. Hattink, and Bene Poelsma, Phys. Rev. B 57, 6803 (1998).

“Influence of Interfacial Hydrogen on Al Thin Film Nucleation on Si”, D. P. Adams, T. M. Mayer, and
B. S. Swartzentruber, J. Appl. Phys. 83, 4690 (1998).

“Fundamentals of Surface Step and Island Formation Mechanisms”, B. S. Swartzentruber, J. Crystal
Growth, 188, 1 (1998).

“Detailed Energetic Interactions of Adsorbed Si Dimers on Si(001)”, Joseph M. Carpinelli and B. S.
Swartzentruber, Surf. Sci., 411, L828 (1998).

“LEEM Measurements of Step Energies at the (001) Surface of Heavily Boron-Doped Silicon”, J. B.
Hannon, N. C. Bartelt, B. S. Swartzentruber, and G. L. Kellogg, Surf. Rev. and Lett., 5, 1159 (1998).

“Electronic Structure Classifications Using STM Conductance Imaging”, K. M. Horn, B. S.
Swartzentruber, G. C. Osbourn, A. M. Bouchard, and J. W. Bartholomew, J. Appl. Phys., 84, 2487
(1998).

“Modification of Si(001) Substrate Bonding by Adsorbed Ge or Si Dimer Islands”, X. R. Qin, Feng Liu,
B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 81, 2288 (1998).

“Direct Measurement of Field Effects on Surface Diffusion”, J. M. Carpinelli and B. S. Swartzentruber,
Phys. Rev. B, 58, 13423 (1998).

“Comparisons of STM Topographic and Multispectral Conductance Images of Si(001) Surfaces”, K.
M. Horn, G. C. Osbourn, and B. S. Swartzentruber, Sandia Report, SAND98-1309J (1998).

“Dynamics of the Si(111) Surface Phase Transition”, J. B. Hannon, H. Hibino, N. C. Bartelt, B. S.
Swartzentruber, T. Ogino, and G. L. Kellogg, Nature, 405, 552 (2000).

“Atom-Scale Identification of Ge/Si Intermixing on Si(001) at Submonolayer Ge Coverages”, X. R.
Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 84, 4645 (2000).

“Diffusional Kinetics of SiGe Dimers on Si(001) Using Atom-Tracking Scanning Tunneling
Microscopy”, X. R. Qin, B. S. Swartzentruber, and M. G. Lagally, Phys. Rev. Lett., 85, 3660 (2000).

“Unique Dynamic Appearance of a Ge-Si Ad-Dimer on Si(001)”, Z. Y. Lu, F. Liu, C. Z. Wang, X. R.
Qin, B. S. Swartzentruber, M. G. Lagally, and K. M. Ho, Phys. Rev. Lett., 85, 5603 (2000).

“Diffusion Kinetics in the Pd/Cu(001) Surface Alloy”, M. L. Grant, B. S. Swartzentruber, N. C. Bartelt,
and J. B. Hannon, Phys. Rev. Lett., 86, 4588 (2001).

“Diffusion on Semiconductor Surfaces”, H. J. W. Zandvliet, B. Poelsema, and B. S. Swartzentruber,
Physics Today, 54(7), 40 (2001); Also published in Parity, 16, 30-37 (2001).

“Vacancy-Mediated and Exchange Diffusion in a Pb/Cu(111) surface alloy: Concurrent Diffusion on
Two Length Scales”, M. L. Anderson, M. J. D’Amato, P. J. Feibelman, and B. S. Swartzentruber,
Phys. Rev. Lett., 90, 126102 (2003).

“Electric Field Effects on Surface Dynamics: Si Ad-Dimer Diffusion and Rotation on Si(001)”, T. R.
Mattsson, B. S. Swartzentruber, R. R. Stumpf, and P. J. Feibelman, Surf. Sci., 536, 121 (2003).

“Diffusion of Vacancies in Metal Surfaces: Theory and Experiment”, R. van Gastel, J. W. M. Frenken,
B. S. Swartzentruber, E. Somfai, and W. van Saarloos, in The Chemical Physics of Solid Surfaces
(ed. P. Woodruff), (2003).

“The Importance of Pb-Vacancy Attractions on Diffusion in the Pb/Cu(001) Surface Alloy”, M. L.
Anderson, N. C. Bartelt, and B. S. Swartzentruber, Surf. Sci., 538, 53 (2003).

“Changing the Diffusion Mechanism of Ge-Si Dimers on Si(001) Using Electric Field”, L. M. Sanders,
R. Stumpf, T. R. Mattsson, and B. S. Swartzentruber, Phys. Rev. Lett., 91(20), 206104 (2003).

“Diffusie van dimeren op halfgeleideroppervlakken”, Harold J. W. Zandvliet, Bene Poelsema, and
Brian S. Swartzentruber, Nederlands Tijdschrift voor Natuurkunde, 69(5), 158 (2003).

“The Effect of Embedded Pb on Cu Diffusion on Pb/Cu(111) Surface Alloys”, M. L. Anderson, N. C.
Bartelt, P. J. Feibelman, B. S. Swartzentruber, and G. L. Kellogg, Surf. Sci., 600(9), 1901 (2006).

“Addimer Chain Structures: Metastable Precursors to Island Formation on Ge-Si(001)-(2×n) Alloyed
Surface”, K. J. Solis, L. R. Williams, B. S. Swartzentruber, and S. M. Han, Surf. Sci., 601(1), 172
(2007).

“How Pb-Overlayer Islands Move Fast Enough to Self-Assemble on Pb-Cu Surface Alloys”, M. L.
Anderson, N. C. Bartelt, P. J. Feibelman, B. S. Swartzentruber, and G. L. Kellogg, Phys. Rev. Lett.,
98(9), 096106 (2007).

“Unusually Strong Space-Charge-Limited Current in Thin Wires”, A. A. Talin, F. Léonard, B. S.
Swartzentruber, X. Wang, and S. D. Hersee, Phys. Rev. Lett., 101(7), 076802 (2008).

“One-Dimensional Defect-Meditated Diffusion of Si Adatoms on the Si(111)-5x2-Au Surface”, E.
Bussmann, S. Bockenhauer, F. J. Himpsel, and B. S. Swartzentruber, Phys. Rev. Lett., 101(26),
266101 (2008).

“GaN Nanowire Light Emitting Diodes Based on Templated and Scalable Nanowire Growth Process”,
S. D. Hersee, M. Fairchild, A. K. Rishinaramangalam, M. S. Ferdous, L. Zhang, P. M. Varangis, B. S.
Swartzentruber, and A. A. Talin, Electronics Letters, 45(1), 75 (2009).

“Diameter-Dependent Electronic Transport Properties of Au-Catalyst/Ge-Nanowire Schottky Diodes”,
F. Léonard, A. A. Talin, B. S. Swartzentruber, and S. T. Picraux, Phys. Rev. Lett., 102(10), 106805
(2009).

“Electrical Transport in GaN Nanowires Grown by Selective Epitaxy”, A. A. Talin, B. S.
Swartzentruber, F. Léonard, X. Wang, and S. D. Hersee, J. Vac. Sci. Tech. B, 27(4), 2040 (2009).

“Electronic Transport in Nanowires: From Injection-Limited to Space-Charge-Limited Behavior”, F.
Léonard, A. A. Talin, A. M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, E. Toimil-Molares, J.G.
Cederberg, X. Wang, S. D. Hersee, and A. Rishinaramangalum, SPIE, 7406(1), 74060G (2009).

“Transport Characterization in Nanowires Using an Electrical Nanoprobe”, A. A. Talin, F. Léonard, A.
M. Katzenmeyer, B. S. Swartzentruber, S. T. Picraux, E. Toimil-Molares, J.G. Cederberg, X. Wang, S.
D. Hersee, and A. Rishinaramangalum, Sem. Sci. and Tech., 25(2), 024015 (2010).

“Ge Diffusion at the Si(100) Surface”, E. Bussmann and B. S. Swartzentruber, Phys. Rev. Lett.,
104(12), 125101 (2010).

“Donor-Acceptor Biomorphs from the Ionic Self-Assembly of Porphyrins”, K. E. Martin, Z. Wang, R. M.
Garcia, Y. Song, J. L. Jacobsen, N. E. Schore, T. Busani, B. S. Swartzentruber, C. J. Medforth, and J.
A. Shelnutt, JACS, 132(23), 8194 (2010).

“Fabrication of a Nanostructure Thermal Property Measurement Platform”, C. T. Harris, J. A.
Martinez, E. A. Shaner, J. Y. Huang, B. S. Swartzentruber, J. P. Sullivan, and G. Chen,
Nanotechnology, 22(27), 275308 (2011).

“Enhanced Thermoelectric Figure of Merit in SiGe Alloy Nanowires by Boundary and Hole-Phonon
Scattering”, J. A. Martinez, P. P. Provencio, S. T. Picraux, J. P. Sullivan, and B. S. Swartzentruber, J.
Appl. Phys., 110(7), 074317 (2011).

“Binary Ionic Porphyrin Nanosheets: Electronic and Light-harvesting Properties Regulated by Crystal
Structure”, Y. Tian, C. Beavers, T. Busani, K. E. Martin, B. S. Swartzentruber, F. van Swol, C. J.
Medforth, and J. A. Shelnutt, Nanoscale, 4, 1695 (2012).

“Understanding Ultrafast Carrier Dynamics in Single Quasi-One-Dimensional Si Nanowires”, M. A.
Seo, S. A. Dayeh, P. C. Upadhya, J. A. Martinez, B. S. Swartzentruber, S. T. Picraux, A. J. Taylor,
and R. P. Pransankumar, Appl. Phys. Lett., 100, 071104 (2012).

“Multiphoton Lithography of Nanocrystalline Platinum and Palladium for Site-Specific Catalysis in 3D
Microenvironments”, L. Zarzar, B. S. Swartzentruber, J. Harper, D. Dunphy, J. C. Brinker, J.
Aizenberg, and B. Kaehr, JACS, 134(9), 4007, (2012).

“Cellular Complexity Captured in Durable Silica Biocomposites,” Bryan Kaehr, Jason L. Townson,
Robin M. Kalinich, Yasmine H. Awad, B. S. Swartzentruber, Darren R. Dunphy, C. Jeffrey Brinker,
PNAS, 109(43), 17336 (2012).

“Tuning of Defects in ZnO Nanorod Arrays Used in Bulk Heterojunction Solar Cells,” Diana C. Iza,
David Munoz-Rojas, Quanxi Jia, B. S. Swartzentruber, and Judith L. MacManus-Driscoll, Nanoscale
Research Lett., 7, 655 (2012).

“Contribution of Radial Dopant Concentration to the Thermoelectric Properties of Core-Shell
Nanowires”, Julio A. Martinez, Jeong H. Cho, Xiaohua Liu, Ting S. Luk, Jianyu Huang, S.T. Picraux,
John P. Sullivan, and B. S. Swartzentruber, Appl. Phys. Lett. 102, 103101 (2013).

“Measurement of Electronic States of PbS Nanocrystal Quantum Dots Using Scanning Tunneling
Spectroscopy: The Role of Parity Selection Rules in Optical Absorption”, B. Diaconescu, L. A.
Padilha, P. Nagpal, B. S. Swartzentruber, and V. I. Klimov, Phys. Rev. Lett., 110, 127406 (2013).